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v ce = 650 v, i c = 30 a trench field stop igbts with fast recovery diode kgf65a 3h , mgf65a 3h , fgf65a 3h data sheet xgf65a3h-dse rev.1.3 sanken elctric co., ltd. 1 oct. 12, 2 01 6 http://www.sanken-ele.co.jp /en ? sanken electric co ., ltd. 2016 description kgf65a3h , MGF65A3H , and fgf65a3h are 650 v field stop igbts. sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. thus, field stop igbts can improve the efficiency of you r circuit. features low saturation voltage high speed switching with integrated fast recovery diode rohs compliant v ce ------------------------------------------------------ 650 v i c (t c = 100 c ) ----------------------------------------- 30 a short circuit withstand time ----------------------- 10 s v ce(sat) ----------------------------------------------- 1. 9 v typ. t f (t j = 175 c ) ------------------------------------ 60 ns typ. v f ---------------------------------------------------- 1. 8 v typ. applications welding converters pfc circuit package to247- 3l to3p- 3l to3pf- 3l not to scale selection guide part number package k gf65a 3 h to247 - 3l mgf65a 3 h to3p - 3l f gf65a 3 h to3p f - 3l 35mm (4) (4) (1) (2) (3) (1) (2) (3) (1) (2) (3) (2 )( 4) (3) (1) (1 ) gate (2 ) collector (3 ) emitter (4 ) collector
kgf65a3h, MGF65A3H, fgf65a3h xgf65a3h - dse rev. 1.3 sanken elctric co., ltd. 2 oct. 12, 2 01 6 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2016 absolute maximum ratings unless otherwise specified, t a = 25 c parameter symbol c onditions rating unit remarks collector to emitter voltage v ce 650 v gate to emitter voltage v g e 3 0 v continuous collector current ( 1 ) i c t c = 25 c 5 0 a t c = 100 c 3 0 a pulsed collector current i c(pulse) pw ? 1 m s , d uty cycle ? 1 % 9 0 a diode continuous forward current (1) i f t c = 25 c 4 0 ( 2 ) a t c = 100 c 3 0 a diode pulsed forward current i f(pulse) pw ? 1 m s , d uty cycle ? 1 % 9 0 a short circuit withstand time t sc v ge = 15 v, v ce = 400 v t j = 175 c 10 v power dissipation p d t c = 25 c 217 w mgf65a 3 h kgf65a 3 h 72 fgf65a 3 h operating junction temperature t j 175 c storage temperature range t stg 55 to 150 c thermal characteristics unless otherwise specified, t a = 25 c parameter symbol conditions m in . t yp . m ax . unit remark s thermal resistance of igbt ( junction to case ) r -& (igbt) 2 2 0. 69 c/w mgf65a 3 h kgf65a 3 h 2 2 2.08 fgf65a 3 h thermal resistance of diode ( junction to case) r - c (di) 2 2 1.15 c/w mgf65a 3 h kgf65a 3 h 2 2 2.28 fgf65a 3 h ( 1 ) i c and i f are determined by the maximum junction temperature for to3p - 3l package. ( 2 ) determined by bond ing wire s c apability .
kgf65a3h, MGF65A3H, fgf65a3h xgf65a3h - dse rev. 1.3 sanken elctric co., ltd. 3 oct. 12, 2 01 6 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2016 electrical characteristics unless otherwise specified, t a = 25 c parameter symbol conditions m in . t yp . m ax . unit collector to emitter breakdown voltage v (br)ce s i c = 100 $ v g e = 0 v 650 2 2 v collector to emitter leakage current i ce s v ce = 650 v, v g e = 0 v 2 2 100 a gate to emitter leakage current i g e s v g e = 3 0 v 2 2 5 00 na gate threshold voltage v g e ( th ) v ce = 10 v , i c = 1 m a 4.0 5.5 7.0 v collector to emitter saturation voltage v ce ( sat ) v ge = 15 v , i c = 3 0 a 2 1. 9 2. 37 v input capacitance c i e s v ce = 20 v , v g e = 0 v , f = 1.0 mhz , 2 18 00 2 pf output capacitance c o e s 2 2 0 0 2 reverse transfer capacitance c r e s 2 8 0 2 gate c harge q g v c e = 520 v, i c = 3 0 a , v ge = 15 v 2 60 2 nc turn - o n delay time t d(on) t j = 25 c , s ee figure 1 . 2 3 0 2 ns rise time t r 2 3 0 2 turn - o ff delay time t d(off) 2 9 0 2 fall time t f 2 3 0 2 turn - on e nergy ( 3 ) e on 2 0. 5 2 mj turn - off e nergy e off 2 0. 4 2 turn - o n delay time t d(on) t j = 175 c , s ee figure 1 . 2 3 0 2 ns rise time t r 2 3 0 2 turn - o ff delay time t d(off) 2 1 2 0 2 fall time t f 2 6 0 2 turn - on e nergy (3) e on 2 1 . 0 2 mj turn - off e nergy e off 2 0 . 7 2 emitter to collector diode forward voltage v f i f = 3 0 a 2 1. 8 2 v emitter to collector diode reverse recovery time t rr i f = 3 0 a , di/dt = 7 00 a/ s 2 5 0 2 ns ( 3 ) energy losses include the reverse recovery of diode.
kgf65a3h, MGF65A3H, fgf65a3h xgf65a3h - dse rev. 1.3 sanken elctric co., ltd. 4 oct. 12, 2 01 6 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2016 test circuits and waveforms (a) test circuit ( b ) waveform figure 1 . test circuits and w aveforms of dv/dt and switching time c onditions v ce = 4 00 v i c = 3 0 a v ge = 15 v r g = 10 l= 100 h 1 5 v r g i c l v c e v g e d u t ( d i o d e ) d u t ( i g b t ) v g e v c e i c 1 0 % 9 0 % 9 0 % 1 0 % t d ( o n ) t r t d ( o f f ) t f d v / d t 9 0 % 1 0 % t t t
kgf65a3h, MGF65A3H, fgf65a3h xgf65a3h - dse rev. 1.3 sanken elctric co., ltd. 5 oct. 12, 2 01 6 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2016 rating and characteristic curves figure 2 . igbt reverse bias safe operating area figure 3 . igbt safe operating area figure 4 . power dissipation vs. to3p - 3l and to247 - 3l case temperature figure 5 . collector current vs. to3p - 3l and to247 - 3l case temperature 0.1 1 10 100 1000 1 10 100 1000 collector current, i c (a) collector - emitter voltage, v ce (v) igbt, single pulse, t j = 175
kgf65a3h, MGF65A3H, fgf65a3h xgf65a3h - dse rev. 1.3 sanken elctric co., ltd. 6 oct. 12, 2 01 6 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2016 figure 6 . power dissipation vs. to3pf - 3l case temperature figure 7 . collector current vs. to3pf - 3l case temperature figure 8 . output characteristics (t j = 25 c ) figure 9 . output characteristics (t j = 17 5 c ) 0 20 40 60 80 100 25 50 75 100 125 150 175 power dissipation, p d (w) case temperature, t c (
kgf65a3h, MGF65A3H, fgf65a3h xgf65a3h - dse rev. 1.3 sanken elctric co., ltd. 7 oct. 12, 2 01 6 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2016 figure 10 . transfer characteristics figure 11 . saturation voltage vs. junction temperature figure 12 . saturation voltage vs. collector current figure 13 . gate threshold voltage vs. junction temperature 0 10 20 30 40 50 60 70 80 90 0 5 10 15 collector current. i c (a) gate - emitter voltage, v ge (v) v ce = 5 v t j = 25
kgf65a3h, MGF65A3H, fgf65a3h xgf65a3h - dse rev. 1.3 sanken elctric co., ltd. 8 oct. 12, 2 01 6 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2016 figure 14 . capacitance characteristics figure 15 . typical gate c harge figure 16 . switching t ime vs. junction temperature figure 17 . switching time vs. collector current 10 100 1000 10000 0 10 20 30 40 50 capacitance (pf) collector - emitter voltage, v ce (v) c oes c ies c res f = 1 mhz, v ge = 0 v 0 10 20 0 20 40 60 gate - emitter voltage, v ge (v) gate charge, qg (nc) i c = 30 a v ce 520 v v ce 130 v 10 100 1000 25 50 75 100 125 150 175 switching time (ns) junction temperature, t j (
kgf65a3h, MGF65A3H, fgf65a3h xgf65a3h - dse rev. 1.3 sanken elctric co., ltd. 9 oct. 12, 2 01 6 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2016 figure 18 . switching time vs. gate resistor figure 19 . switching loss vs. junction temperature figure 20 . switching loss vs. collector current figure 21 . switching loss vs. gate resistor 10 100 1000 10 100 switching time (ns) gate resistor, r g t f t d(off) t d(on) t r inductive load, i c = 30 a, v ce = 400 v, v ge = 15 v, t j = 175
kgf65a3h, MGF65A3H, fgf65a3h xgf65a3h - dse rev. 1.3 sanken elctric co., ltd. 10 oct. 12, 2 01 6 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2016 figure 22 . switching loss vs. collector - emitter voltage figure 23 . diode forward characteristics figure 24 . diode forward voltage vs. junction temperature figure 25 . diode reverse recovery time vs. di/dt 0 1 2 3 4 200 250 300 350 400 450 500 switching loss (mj) collector - emitter voltage, v ce (v) e on e off inductive load, i c = 30 a, v ge = 15 v, r g = t j = 175 c ) i f = 10 a i f = 30 a i f = 60 a 40 60 80 100 120 140 160 300 400 500 600 700 800 900 1000 reverse recovery time, t rr (ns) di/dt (a/ s) t j = 175
kgf65a3h, MGF65A3H, fgf65a3h xgf65a3h - dse rev. 1.3 sanken elctric co., ltd. 11 oct. 12, 2 01 6 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2016 figure 26 . diode r everse r ecovery c harge vs. di/dt figure 27 . diode r everse recovery current vs. di/dt figure 28 . transient thermal resistance (to3p - 3l and to247 - 3l) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 300 400 500 600 700 800 900 1000 reverse recovery charge, q rr ( c) di/dt (a/ s) t j = 175
kgf65a3h, MGF65A3H, fgf65a3h xgf65a3h - dse rev. 1.3 sanken elctric co., ltd. 12 oct. 12, 2 01 6 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2016 figure 29 . transient thermal resistance (to3pf - 3l) 0.001 0.01 0.1 1 10 thermal resistance (
kgf65a3h, MGF65A3H, fgf65a3h xgf65a3h - dse rev. 1.3 sanken elctric co., ltd. 13 oct. 12, 2 01 6 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2016 physical dimensions ? to2 47 - 3 l ? to 3p - 3l
kgf65a3h, MGF65A3H, fgf65a3h xgf65a3h - dse rev. 1.3 sanken elctric co., ltd. 14 oct. 12, 2 01 6 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2016 ? to 3pf - 3l notes: - all dimensions in millimeters - pin treatment for to2 47 , to3p and to3pf : pb - free ( rohs compliant) - when soldering the products, make sure to mi nimize the working time within the following limits: flow: 260 5 c / 10 1 s, 2 times soldering iron: 380 10 c / 3.5 0.5 s, 1 time (soldering should be at a distance of at least 1.5 mm from the body of the products.) - soldering should be at a distance of at least 1.5 mm from the body of the products. - the r eco mmended s crew t orque for to2 47 , to 3p and to3pf : wr1ap wrnjiafp marking diagram ( a ) part number ymdd xx fgf 65 a 3 h ( b ) lot number y is the last digit of the year of manufacture ( 0 to 9 ) . m is the month of the year ( 1 to 9 , o , n or d ) . dd is the day of the month ( 01 to 31 ) . xx is the control number . mgf 65 a 3 h kgf 65 a 3 h ymdd xx ymdd xx to 3 pf - 3 l to 3 p - 3 l to 247 - 3 l ( a ) ( b ) ( a ) ( b ) ( a ) ( b )
kgf65a3h, MGF65A3H, fgf65a3h xgf65a3h - dse rev. 1.3 sanken elctric co., ltd. 15 oct. 12, 2 01 6 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2016 important notes ? all data, illustrations, graphs , tables dqgdq\rwkhulqirupdwlrqlqfoxghglqwklvgrfxphqwdvwr6dqnhq? s products listed herein (the 3 sanken 3urgxfwv are current as of the date this document is issued . all contents in this document are subject to any change without notice due to improvement of the sanken products , etc. please make sure to confirm with a sa nken sales representative that the contents set forth in this document reflect the latest revisions before use. ? the sanken products are intended for use as components of general purpose electronic equipment or apparatus (such as home appliances, office equ ipment, telecommunication equipment, measuring equipment, etc.). prior to use of the sanken products, please put your signature, or affix your name and seal, on the specification documents of the sanken products and return them to sanken. when considering use of the sanken products for any applications that require high er reliability (such as transportation equipment and its control systems, traffic signal control systems or equipment , disaster/crime alarm systems, various safety devices, etc.), you must co ntact a sanken sales representative to discuss the suitability of such use and put your signature, or affix your name and seal, on the specification documents of the sanken products and return them to sanken, prior to the use of the sanken products. the sa nken products are not intended for use in any applications that require extremely high reliability such as: aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result in death or serious in jury to people, i.e., medical devices in class iii or a higher class as defined by relevant laws of japan froohfwlyho\wkh36shflilf$ssolfdwlrqv6dqnhqdvvxphvqroldelolw\ruuhvsrqvlelolw\zkdwvrhyhuirudq\dqgdoogdpdjhv and losses that may be s uffered by you, users or any third party, resulting from the use of the sanken products in the specific applications or in manner not in compliance with the instructions set forth herein. ? in the event of using the sanken p roducts by either (i) combining ot her products or materials therewith or (ii) physically, chemically or otherwise processing or treating the same , you must duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. ? altho ugh sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the occurrence of any failure or defect in semiconductor products at a certain rate. you must take, at your own responsibility , preven tative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which the sanken products are used, upon due consideration of a failure occurrence rate or derating, etc., in order not to cause any human i njury or death, fire accident or social harm which may result from any failure or malfunction of the sanken products. please refer to the relevant specification documents and sanken ? s official website in relation to derating. ? no a nti - radioactive ray design ha s been adopted for the sanken p roducts. ? no contents in this document can ehwudqvfulehgrufrslhgzlwkrxw6dqnhq?v prior written consent. ? the c ircuit constant , operation examples, circuit examples, pattern layout examples, design e xamples , recommended examples , all information and evaluation result s based thereon, etc., described in this document are presented for the sole purpose of reference of use of the sanken products and sanken assume s no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you, u sers or any third party , result ing from the foreg oing . ? $oowhfkqlfdolqirupdwlrqghvfulehglqwklvgrfxphqwwkh37hfkqlfdo,qirupdwlrq is presen ted for the sole purpose of reference of use of the sanken products and no license, express, implied or otherwise, is granted hereby under any intellectual pr operty rights or any other rights of sanken. ? unless otherwise agreed in writing between sanken and you, sanken makes no warranty of any kind, whether express or implied, including, without limitation, any warranty (i) as to the quality or performance of the sanken products (such as implied warranty of merchantability, or implied warranty of fitness for a particular purpose or special environment), (ii) that any sanken pro duct is delivered free of claims of third parties by way of infringement or the like, (iii) that may arise from course of performance, course of dealing or usage of trade, and (iv) as to any information contained in this document (including its accuracy, usefulness, or reliability). ? in the event of using the sanken products, you must use t he same after carefully examining all applicable environmental laws and regulations that regulate the inclusion or use of any particular controlled substances, including , but not limi ted to , the eu rohs directive , so as to be in strict compliance with such applicable laws and regulations . ? you must not use the sanken products or the technical information for the purpose of any military applications or use, including but not limited to the development of weapons of mass destruction. in the event of exporting the sanken products or the technical information, or providing them for non - residents, you must comply with all applicable export control laws and regulations in each country including the u.s. export administration regulations (ear) and the foreign exchan ge and foreign trade act of japan , and follow the procedures required by such applicable laws and regulations. ? sanken assumes no responsibility for any troubles, which may occur during the transportation of the sanken products including the falling thereof , rxwri6dqnhq?vglvwulexwlrqqhwzrun ? although sanken has prepared this document with its due care to pursue the accuracy thereof, sanken does not warrant that it is error free and sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting from any possible error s or omissions in connection with the contents included herein . ? please refer to the relevant specification documents in relation to particular precautions when using the sanken products, and re fer to our official website in relation to general instructions and directions for us ing the sanken products. ? all rights and title in and to any specific trademark or tradename belong to sanken or such original right holder(s). dsgn - cez - 1600 2

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